AOC2411 30v p-channel mosfet general description product summary vds -30v i d (at v gs =-4.5v) -3.4a r ds(on) (at v gs =-4.5v) < 45m w r ds(on) (at v gs =-2.5v) < 60m w the AOC2411 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v while retaining a 12v v gs(max) rating. equivalent circuit top view bottom view wlcsp 1.6x1.6_4 symbol v ds v gs t a =25c i d i sm p d t j , t stg symbol typ t 5s 75 steady-state 130 steady-state r q jf 16 note 1. mounted on minimum pad pcb note 2. pw <300 s pulses, duty cycle 0.5% max maximum -3.4 vv gate-source voltage drain-source voltage source current (dc) note1 units parameter absolute maximum ratings t a =25c unless otherwise noted 12 power dissipation note1 t a =25c c -30 a 0.8 -55 to 150 -52 w source current (pulse) note2 junction and storage temperature range 20 maximum junction-to-ambient note1 c/w maximum junction-to-foot(drain) c/w thermal characteristics parameter units maximum junction-to-ambient note1 r q ja 90 max 155 c/w g d s pin1(g) g ds 1 2 3 4 d rev 1 : august 2012 www.aosmd.com page 1 of 5
AOC2411 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -0.6 -1 -1.4 v 37 45 t j =125c 52 63 45 60 g fs 7.5 s v fsd -0.7 -1 v c iss 1253 1630 pf c oss 167 220 pf c rss 105 150 pf r g 16.7 34 w q g 12.5 20 nc q gs 2 nc q gd 3.2 nc t d(on) 14 25 t r 12 20 t d(off) 150 225 t f 72 110 t rr 14.5 30 ns note 1: guaranteed by design ns body diode reverse recovery time i f =-1a, di/dt=100a/ m s vgs=-4.5v, vds=-10v, id=-1a total gate charge gate source charge gate drain charge v gs =-4.5v, v ds =-10v, r l =10 w, id=1a, r gen =6 w turn-off fall time parameter conditions v gs =-4.5v, i d =-1a static source to source on-resistance gate threshold voltage v gs =-2.5v, i d =-1a static parameters i d =-1a,v gs =0v, v ds =-5v, i d =-1a dynamic parameters note1 diode forward voltage m w v gs =0v, v ds =-15v, f=1mhz, electrical characteristics (t j =25c unless otherwise noted) switching parameters note1 v gs =0v, v ds =0v, f=1mhz zero gate voltage source current gate leakage current forward transconductance r ds(on) v ds =v gs, i d =-250 m a v ds =-30v, v gs =0v v ds =0v, v gs =12v source-source breakdown voltage i d =-250 m a, v gs =0v i dss m a input capacitance output capacitance turn-on delaytime turn-on rise time turn-off delaytime reverse transfer capacitance gate resistance rev 1 : august 2012 www.aosmd.com page 2 of 5 note 1: guaranteed by design this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice rev 1 : august 2012 www.aosmd.com page 2 of 5
AOC2411 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-1.5v -2.5v -6v - 4.5v -10v 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics 30 35 40 45 50 55 60 0 2 4 6 8 r ds(on) (m w ww w ) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance v gs =-2.5v i d =-1a v gs =-4.5v i d =-1a 25 c 125 c v ds =-5v v gs =-2.5v v gs =-4.5v rev 1 : august 2012 www.aosmd.com page 3 of 5 30 0 2 4 6 8 -i s (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 0 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-1a 25 c 125 c rev 1 : august 2012 www.aosmd.com page 3 of 5
AOC2411 typical electrical and thermal characteristics 0 1 2 3 4 5 0 3 6 9 12 15 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 400 800 1200 1600 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 10 20 30 40 50 power (w) c oss c rss v ds =-10v i d =-1a t j(max) =150 c t a =25 c 0.1 1.0 10.0 100.0 -i d (amps) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c 100 m s 100ms rev 1 : august 2012 www.aosmd.com page 4 of 5 0 10 0.001 0.01 0.1 1 10 100 1000 10000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance single pulse d=t on /(t on +t) t j,pk =t a +p d .z q ja .r q ja r q ja =155 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.0 0.1 0.01 0.1 1 10 100 -v ds (volts) figure 9: maximum forward biased safe operating area (note f) t j(max) =150 c t c =25 c 100ms rev 1 : august 2012 www.aosmd.com page 4 of 5
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